Trap-induced degradation mechanisms in quasi-vertical GaN PiN diodes under the combined effects of high-energy heavy ion irradiation and off-state reverse bias

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0303184
Affiliations:
3
Authors:
15
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Institutions Authors Share
School of Electronic Science and Engineering, NJU, China
11.000000
11.000000
 0.73
Nanjing University (NJU), China
2.000000
 0.13
Harbin Institute of Technology (HIT), China
2.000000
 0.13
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