High gain Ga2O3/GaN avalanche photodetector with separated absorption and multiplication structure

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0303222
Affiliations:
3
Authors:
11
Institutions Authors Share
State Key Laboratory on Integrated Optoelectronics, China
9.000000
0.82
Shenzhen Pinghu Laboratory, China
1.000000
0.09
Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), CAS, China
1.000000
0.09