Enhanced conductance linearity in HfS2-based optoelectronic memristors via a defective h-BN interlayer for high-performance neuromorphic visual system

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0303804
Affiliations:
2
Authors:
11
Go to article
Institutions Authors Share
State Key Laboratory of Integrated Optoelectronics, NENU, China
9.500000
 0.86
Northeast Normal University (NENU), China
1.500000
 0.14
Interested in Nanotechnology?