In situ analysis of SiO2 films etched under cryogenic conditions using H2/F2/Ar gas mixture plasma

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0303879
Affiliations:
2
Authors:
7
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Institutions Authors Share
KIOXIA Corporation, Japan
5.000000
 0.71
University of Yamanashi, Japan
2.000000
 0.29
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