Reconfigurable threshold voltage and excellent anti-single-event transient performance in the HfO2-based ferroelectric FlexFET

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0304006
Affiliations:
3
Authors:
7
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Institutions Authors Share
MOE Key Laboratory of Low Dimensional Materials and Application Technology, XTU, China
3.333333
 0.48
Xiangtan University (XTU), China
2.833333
 0.40
Xidian University, China
0.833333
 0.12
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