Photoluminescence properties of α-(AlxGa1–x)2O3 thin films under excitation with synchrotron radiation
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0304663
- Affiliations:
- 5
- Authors:
- 8
| Institutions | Authors | Share |
|---|---|---|
| Beijing MIG Semiconductor, China | 0.31 | |
| Institute of Semiconductors (IOS), CAS, China | 0.25 | |
| University of Chinese Academy of Sciences (UCAS), China | 0.25 | |
| Saga University, Japan | 0.13 | |
| Beijing University of Posts and Telecommunications (BUPT), China | 0.06 |