Influence of Bi surfactant on tetrahedral N interstitial formation and optoelectronic properties of dilute GaAsN alloys

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0304729
Affiliations:
4
Authors:
8
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Institutions Authors Share
University of Michigan (U-M), United States of America (USA)
4.000000
 0.50
Wrocław University of Science and Technology (WRUT), Poland
2.000000
 0.25
Ben-Gurion University of the Negev (BGU), Israel
2.000000
 0.25
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