Achieving high carrier concentration β-Ga2O3 epilayers via MOCVD using SiCl4 as dopant

Journal:

Applied Physics Letters

Published:

2026-01-12

DOI:

10.1063/5.0304883

Affiliations:

4

Authors:

7

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Institutions	Authors	Share
Fuzhou University (FZU), China	3.500000	0.50
Shanghai Institute of Optics and Fine Mechanics (SIOM), CAS, China	2.666667	0.38
Shanghai Key Laboratory of Wide and Ultra-Wide Bandgap Semiconductor Materials, China	0.833333	0.12

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