Strain-engineered photogalvanic anisotropy in SnP2X6 (X = S, Se) monolayers for high-performance optoelectronics

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0306331
Affiliations:
1
Authors:
6
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Institutions Authors Share
Hengyang Normal University (HYNU), China
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