Impact of high-temperature annealing on oxide semiconductor self-aligned top-gate thin-film transistors with 1 μm channel length
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0306379
- Affiliations:
- 2
- Authors:
- 4
| Institutions | Authors | Share |
|---|---|---|
| Yonsei University, South Korea | 1.00 |