Indium bilayer mediated InGaN surface decomposition: A comprehensive phenomenological model of epitaxial kinetic mechanisms
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0306453
- Affiliations:
- 2
- Authors:
- 1
| Institutions | Authors | Share |
|---|---|---|
| University of Crete (UOC), Greece | 0.50 | |
| Institute of Electronic Structure and Laser (IESL), FORTH, Greece | 0.50 |