Impact of high-pressure annealing on characteristics of InGaAs/InAlAs metamorphic high-electron mobility transistors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0306560
Affiliations:
3
Authors:
10
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Institutions Authors Share
Inha University, South Korea
4.000000
 0.40
Korea Advanced Nano Fab Center (KANC), South Korea
4.000000
 0.40
Chungbuk National University, South Korea
2.000000
 0.20
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