Resolving carrier concentration of n-type AlN/GaN nanowires by scanning spreading resistance microscopy

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0306615
Affiliations:
4
Authors:
7
Go to article
Institutions Authors Share
Lyon Nanotechnology Institute (INL), France
4.000000
 0.57
Laboratory for Quantum Photonics, Electronics and Engineering (PHELIQS), France
2.000000
 0.29
Institut Néel, France
1.000000
 0.14
Interested in Atomic, Molecular and Optical Physics?