Atomistic mechanisms of opposite threshold voltage shift induced by La and Al doping in HfO2-based gate stacks: First-principles insights

Journal:

Applied Physics Letters

Published:

2026-01-26

DOI:

10.1063/5.0307383

Affiliations:

1

Authors:

5

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Institutions	Authors	Share
MOE Key Laboratory for Computational Physical Sciences, Fudan University, China	5.000000	1.00

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