Trap dynamics in the carbon-doped GaN buffer of AlGaN/GaN HEMTs through back-gate bias and sub-bandgap illumination

Journal:

Applied Physics Letters

Published:

2026-05-25

DOI:

10.1063/5.0307495

Affiliations:

3

Authors:

12

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Institutions	Authors	Share
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, China	8.500000	0.71
University of Science and Technology of China (USTC), China	3.500000	0.29

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