In situ interface engineering enabled high-performance InSnO thin-film transistor incorporating ultrathin Y2O3 layer

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0307574
Affiliations:
2
Authors:
8
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Institutions Authors Share
State Key Laboratory of Chemo and Biosensing, HNU, China
6.000000
 0.75
North China University of Water Resources and Electric Power (NCWU), China
2.000000
 0.25
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