High-performance optoelectronic devices based on p-type selenium-alloyed tellurium oxide semiconductors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0308006
Affiliations:
4
Authors:
10
Institutions Authors Share
Jiangnan University, China
7.000000
0.70
State Key Laboratory of Optoelectronic Materials and Technologies (OEMT), SYSU, China
2.000000
0.20
The Chinese University of Hong Kong (CUHK), China
1.000000
0.10