Performance enhancement and defect evolution in β-Ga2O3 Schottky barrier diodes induced by 170 keV proton irradiation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0308041
Affiliations:
3
Authors:
9
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Institutions Authors Share
Harbin Institute of Technology (HIT), China
8.000000
 0.89
China Electronics Technology Group Corporation (CETC), China
1.000000
 0.11
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