Mist-chemical vapor deposition grown Ge-doped α-Ga2O3 thin films with high electron mobility

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0308320
Affiliations:
3
Authors:
6
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Institutions Authors Share
Kyoto University, Japan
4.500000
 0.75
Hyogo Prefectural Institute of Technology, Japan
1.000000
 0.17
Ritsumeikan University, Japan
0.500000
 0.08
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