Universal Ohmic contacts to β-Ga2O3 using interfacial dipoles of ultra-thin MgF2 layer and related defect passivation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0308375
Affiliations:
2
Authors:
6
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Institutions Authors Share
Indian Institute of Technology Ropar (IIT Ropar), India
4.000000
 0.67
Indian Institute of Technology Mandi (IIT Mandi), India
2.000000
 0.33
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