Preferential formation of highly efficient Eu luminescent centers in Eu-doped GaN grown on semipolar (202¯1) GaN

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0308400
Affiliations:
5
Authors:
5
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Institutions Authors Share
The University of Osaka (UOsaka), Japan
4.750000
 0.95
Ritsumeikan University, Japan
0.250000
 0.05
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