Investigation of physical limit of subthreshold swing at cryogenic temperatures in dual-gate short-channel InZnO transistors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0308555
Affiliations:
2
Authors:
5
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Institutions Authors Share
Fuzhou University (FZU), China
4.000000
 0.80
Beijing Advanced Innovation Center for Integrated Circuits, China
1.000000
 0.20
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