High-performance logic circuits based on Ag/ZnAl2O4/FTO resistive random-access memory devices

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0308701
Affiliations:
2
Authors:
8
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Institutions Authors Share
Guangdong University of Technology (GDUT), China
7.000000
 0.88
Henan University of Engineering, China
1.000000
 0.13
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