Dislocations influence the background hole densities in Ge/Si virtual substrates

Journal:

Applied Physics Letters

Published:

2025-12-15

DOI:

10.1063/5.0308836

Affiliations:

5

Authors:

9

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Institutions	Authors	Share
Innovations for High Performance Microelectronics (IHP), Germany	4.000000	0.44
JARA Fundamentals of Future Information Technology (JARA-FIT), Germany	3.000000	0.33
European Synchrotron Radiation Facility (ESRF), France	1.000000	0.11
Nagoya University, Japan	0.500000	0.06
University of Roma Tre, Italy	0.500000	0.06

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