Mechanistic insight and demonstration of antiferroelectric-gated enhancement-mode GaN HEMTs
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0309082
- Affiliations:
- 3
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| National University of Singapore (NUS), Singapore | 0.61 | |
| Institute of Microelectronics (IME), A*STAR, Singapore | 0.28 | |
| University of Notre Dame (ND), United States of America (USA) | 0.11 |