Beyond a single mechanism: Uncovering the dual origin of degradation in β-Ga2O3 SBDs under forward bias stress

Journal:

Applied Physics Letters

Published:

2026-03-23

DOI:

10.1063/5.0309118

Affiliations:

4

Authors:

9

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Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	6.000000	0.67
China Aerospace Science and Technology Corporation (CASC), China	1.000000	0.11
The Hong Kong University of Science and Technology (HKUST), China	1.000000	0.11
Xidian University, China	1.000000	0.11

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