Gate resistance thermometry measurements on fully vertical AlGaN (2.5%) FinFETs

Journal:

Applied Physics Letters

Published:

2026-02-09

DOI:

10.1063/5.0309620

Affiliations:

9

Authors:

10

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Institutions	Authors	Share
Lund University (LU), Sweden	2.666667	0.27
Institute of High Pressure Physics (UNIPRESS), PAS, Poland	2.000000	0.20
Centre for III-Nitride Technology (C3NiT), Sweden	1.666667	0.17
Hexagem, Sweden	1.500000	0.15
Hitachi Energy Sweden AB, Sweden	1.000000	0.10
Wallenberg Initiative Material Science for Sustainability (WISE), Sweden	0.500000	0.05
Volvo Car, Sweden	0.333333	0.03
Linköping University (LiU), Sweden	0.333333	0.03

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