Over 3 kV and ultra-low leakage vertical (011) β-Ga2O3 power diodes with engineered Schottky contact and high-permittivity dielectric field plate

Journal:

Applied Physics Letters

Published:

2026-02-02

DOI:

10.1063/5.0309746

Affiliations:

1

Authors:

2

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Institutions	Authors	Share
Iowa State University, United States of America (USA)	2.000000	1.00

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