3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination

Journal:

Applied Physics Letters

Published:

2026-01-26

DOI:

10.1063/5.0309845

Affiliations:

1

Authors:

15

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Institutions	Authors	Share
Nanjing University (NJU), China	15.000000 15.000000	1.00

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