Oxidation degradation of TiN electrodes in DRAM capacitors and mitigation through AlN insertion

Journal:

Applied Physics Letters

Published:

2026-01-12

DOI:

10.1063/5.0309909

Affiliations:

2

Authors:

7

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Institutions	Authors	Share
University of Science and Technology of China (USTC), China	7.000000	1.00

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