A fast-switching threshold memristor based on AlN/Ag/AlN stacked device for mental disorder electroencephalogram recognition

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0309940
Affiliations:
3
Authors:
6
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Institutions Authors Share
Hebei University (HBU), China
4.000000
 0.67
Affiliated Hospital of Hebei University, HBU, China
2.000000
 0.33
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