Quantitative insight into illumination-induced barrier lowering mediated by self-trapped-holes in Ga2O3 Schottky photodiodes

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0310226
Affiliations:
2
Authors:
8
Go to article
Institutions Authors Share
School of Electronic Science and Engineering, NJU, China
7.000000
 0.88
Jiangnan University, China
1.000000
 0.13
Interested in Macromolecular and Materials Chemistry?