AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments

Journal:

Applied Physics Letters

Published:

2026-03-16

DOI:

10.1063/5.0310395

Affiliations:

9

Authors:

10

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Institutions	Authors	Share
Lund University (LU), Sweden	2.666667	0.27
Institute of High Pressure Physics (UNIPRESS), PAS, Poland	2.000000	0.20
Centre for III-Nitride Technology (C3NiT), Sweden	1.666667	0.17
Wallenberg Initiative Material Science for Sustainability (WISE), Sweden	1.000000	0.10
Hitachi Energy Sweden AB, Sweden	1.000000	0.10
Hexagem, Sweden	1.000000	0.10
Volvo Car, Sweden	0.333333	0.03
Linköping University (LiU), Sweden	0.333333	0.03

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