Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0310464
Affiliations:
6
Authors:
6
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Institutions Authors Share
Centre for III-Nitride Technology (C3NiT), Sweden
2.666667
 0.44
Swiss Federal Institute of Technology Lausanne (EPFL), Switzerland
1.000000
 0.17
Tech University of Korea (TU Korea), South Korea
1.000000
 0.17
Wallenberg Initiative Material Science for Sustainability (WISE), Sweden
0.833333
 0.14
Stanford University, United States of America (USA)
0.500000
 0.08
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