Retention improvement in vertical NAND flash memory using block soft erase scheme

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0310928
Affiliations:
2
Authors:
6
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Institutions Authors Share
Seoul National University (SNU), South Korea
5.000000
 0.83
SK Hynix Inc., South Korea
1.000000
 0.17
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