Parallel 2DHG conduction in AlN/GaN/AlN HEMTs: Leakage mechanisms and electric field distribution

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0310993
Affiliations:
2
Authors:
7
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Institutions Authors Share
Kavli Institute at Cornell for Nanoscale Science, United States of America (USA)
4.000000
 0.57
University of Bristol (UoB), United Kingdom (UK)
3.000000
 0.43
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