Ultralow contact resistance of 0.058Ωmm achieved by pulsed sputtering deposition of regrown degenerately doped GaN contacts for AlGaN/GaN high-electron-mobility transistors

Journal:

Applied Physics Letters

Published:

2026-02-09

DOI:

10.1063/5.0311448

Affiliations:

1

Authors:

3

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Institutions	Authors	Share
The University of Tokyo (UTokyo), Japan	3.000000	1.00

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