Anomalous dynamic on-resistance instability mechanisms of p-GaN gate AlGaN/GaN HEMTs under power cycling tests

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0311656
Affiliations:
2
Authors:
6
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Institutions Authors Share
Tiangong University (TGU), China
3.500000
 0.58
Yongjiang Laboratory, China
2.500000
 0.42
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