Dual regulation of band asymmetry via GaSb layers for high-performance InAs/GaSb long-wavelength infrared nBn detectors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0312001
Affiliations:
3
Authors:
10
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Institutions Authors Share
Beijing Information Science and Technology University (BISTU), China
9.000000
 0.90
Institute of Semiconductors (IOS), CAS, China
0.500000
 0.05
University of Chinese Academy of Sciences (UCAS), China
0.500000
 0.05
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