Robust Vth stability in normally off GaN HEMTs with a stacked p+/p−-NiO gate: Suppression of interface trapping and electric-field crowding

Journal:

Applied Physics Letters

Published:

2026-03-16

DOI:

10.1063/5.0312146

Affiliations:

1

Authors:

11

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Institutions	Authors	Share
Nanjing University (NJU), China	11.000000 11.000000	1.00

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