Achieving high-efficiency, long-wavelength, and high-uniformity InGaN red micro-LEDs through polarization effect and stress engineering of the AlGaN capping layer

Journal:

Applied Physics Letters

Published:

2026-02-09

DOI:

10.1063/5.0312640

Affiliations:

2

Authors:

12

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Institutions	Authors	Share
State Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies, China	6.000000	0.50
Tsinghua National Laboratory for Information Science and Technology (TNList), China	6.000000	0.50

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