Low-stress MOCVD-grown 15  𝛍 m GaN layers on 200 mm engineered substrates with minimal wafer bow

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0312962
Affiliations:
2
Authors:
12
Go to article
Institutions Authors Share
Interuniversity Microelectronics Centre (IMEC), Belgium
10.000000
10.000000
 0.83
Aixtron SE, Germany
2.000000
 0.17
Interested in Atomic, Molecular and Optical Physics?