Improved RF power performance in GaN-on-SiC HEMTs through thermal design of the GaN buffer layer

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0313002
Affiliations:
2
Authors:
10
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Institutions Authors Share
Xidian University, China
9.000000
 0.90
Wuhan University (WHU), China
1.000000
 0.10
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