Temperature-driven crossover from abrupt thermal to gradual field-driven RESET in single-layer HfO2 RRAMs

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0313170
Affiliations:
3
Authors:
4
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Institutions Authors Share
Lund University (LU), Sweden
3.000000
 0.75
VTT Technical Research Centre of Finland Ltd., Finland
1.000000
 0.25
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