Inelastic-stress-induced threshold instability and mobility degradation in AlN/GaN MIS-HEMTs on Si

Journal:

Applied Physics Letters

Published:

2026-03-09

DOI:

10.1063/5.0313481

Affiliations:

4

Authors:

6

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Institutions	Authors	Share
Nanyang Technological University (NTU), Singapore	3.500000	0.58
National Semiconductor Translation and Innovation Centre for Gallium Nitride (NSTIC (GaN)), Singapore	1.250000	0.21
Institute of Microelectronics (IME), A*STAR, Singapore	1.250000	0.21

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