High-mobility nitrogen-polar GaN/AlGaN heterostructures via impurity modulation

Journal:

Applied Physics Letters

Published:

2026-02-16

DOI:

10.1063/5.0313847

Affiliations:

1

Authors:

12

Go to article

Institutions	Authors	Share
State Key Laboratory on Integrated Optoelectronics, China	12.000000 12.000000	1.00

Interested in Atomic, Molecular and Optical Physics?