Interface-engineered top-gate indium-tin-oxide thin-film transistors with 2-nm channels

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0313940
Affiliations:
2
Authors:
6
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Institutions Authors Share
National Yang Ming Chiao Tung University (NYCU), Taiwan
5.500000
 0.92
Texas A&M University (TAMU), United States of America (USA)
0.500000
 0.08
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