Structural and ferroelectric properties of sputter-epitaxial ScAlN on GaN grown at various temperatures

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0313954
Affiliations:
4
Authors:
8
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Institutions Authors Share
The University of Tokyo (UTokyo), Japan
4.000000
 0.50
Tokyo University of Science (TUS), Japan
3.000000
 0.38
Institute of Science Tokyo (Science Tokyo), Japan
1.000000
 0.13
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