Enhanced resistive switching performance via air-stable FA3Sb2I9 thin films for flexible and multilevel memory applications

Journal:

Applied Physics Letters

Published:

2026-05-11

DOI:

10.1063/5.0314151

Affiliations:

5

Authors:

10

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Institutions	Authors	Share
Chongqing University of Posts and Telecommunications (CQUPT), China	7.500000	0.75
Tianjin University of Technology (TJUT), China	1.000000	0.10
MOE Key Laboratory of Optoelectronic Technology and Systems, CQU, China	1.000000	0.10
Xidian University, China	0.500000	0.05

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