Investigation of backward switching and write margin optimization of SOT-MTJ devices

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0314449
Affiliations:
2
Authors:
14
Institutions Authors Share
State Key Laboratory of Spintronic Devices and Technologies, China
12.000000
12.000000
0.86
Zhejiang Hikstor Technology Co., LTD., China
2.000000
0.14